US 2022/0013637 A1Published application

Insulated-gate semiconductor device

AssigneeFuji Electric Co., Ltd.

InventorKeiji OKUMURA

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Abstract

An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.

Claims5

Dependent claims

An insulated-gate semiconductor device, comprising a plurality of stripe-shaped unit cells arranged, the unit cell including:

a first conductivity type drift layer;
a second conductivity type base region provided on the drift layer;
a first conductivity type main-electrode region provided in an upper portion of the base region and having an impurity concentration higher than that of the drift layer;
an insulated-gate electrode structure provided inside a stripe-shaped trench so that one sidewall surface is in contact with the main-electrode region and the base region;
and
a second conductivity type gate protection-region provided in a stripe shape on the drift layer so as to be in contact with a bottom surface and the other sidewall surface of the trench and having an impurity concentration higher than that of the base region,
wherein a structure of interposing the common base region between the trenches of adjacent unit cells and a structure of interposing the common gate protection-region between the trenches of adjacent unit cells are alternately repeated, and
the gate protection-regions are intermittently arranged along a longitudinal direction of the trench.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/487,563Filed 28 Sep 2021
Priority: JP 2017-23703311 Dec 2017
Published: 13 Jan 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification31 codes

H10D 62/393
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: body regions of…
H10D 12/031
Manufacture or treatment: of igbts
H10D 12/038
Of vertical IGBTs: having a recessed gate, e.g. trench-gate IGBTs
H10D 12/461
Vertical IGBTs: having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions

Family

Application16/170,530Division · filed 25 Oct 2018
Application16/661,925Division · filed 23 Oct 2019
Application16/844,113Division · filed 9 Apr 2020
Application17/487,563Division
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