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US 2022/0013632 A1Published application
High-voltage semiconductor device with increased breakdown voltage
AssigneeYangtze Memory Technologies Co., Ltd.
InventorChao Sun
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Abstract
High voltage semiconductor device is disclosed. The high voltage semiconductor device includes a semiconductor substrate, a gate structure on the semiconductor substrate, at least one first isolation structure, and at least on first drift region. The first isolation structure and the first drift region are disposed in the semiconductor substrate at a side of the gate structure. The first isolation structure vertically penetrates through the first drift region.
Claims17
A high voltage semiconductor device, comprising:
- a semiconductor substrate, having an active area, and the semiconductor substrate having a first conductivity type;
- a gate structure, disposed on the active area of the semiconductor substrate;
- at least one first isolation structure, disposed in the active area of the semiconductor substrate at a side of the gate structure in a top view;
- and
- at least one first drift region, disposed in the active area of the semiconductor substrate at the side of the gate structure in the top view, the at least one first drift region having a second conductivity type complementary to the first conductivity type, and the at least one first isolation structure vertically penetrating through the at least one first drift region.
2 more elements
Dependencies are inferred from the claim text.