Semiconductor device with flowable layer and method for fabricating the same
AssigneeNanya Technology Corporation
InventorLIANG-PIN CHOU
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first isolation layer positioned in the substrate, a first treated flowable layer positioned between the first isolation layer and the substrate, a second isolation layer positioned in the substrate, and a second treated flowable layer positioned between the second isolation layer and the substrate. A width of the first isolation layer is greater than a width of the second isolation layer, and a depth of the first isolation layer is less than a depth of the second isolation layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first isolation layer positioned in the substrate;
- a first treated flowable layer positioned between the first isolation layer and the substrate;
- a second isolation layer positioned in the substrate;
- and
- a second treated flowable layer positioned between the second isolation layer and the substrate;
- wherein a width of the first isolation layer is greater than a width of the second isolation layer, and a depth of the first isolation layer is less than a depth of the second isolation layer.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first trench and a second trench in the substrate;
- conformally forming a flowable layer on a top surface of the substrate and in the first trench and the second trench;
- performing a thermal process to turn the flowable layer into a processed flowable layer;
- forming a layer of isolation material on the processed flowable layer to completely fill the first trench and the second trench;
- and
- performing a planarization process to turn the layer of isolation material into a first isolation layer in the first trench and a second isolation layer in the second trench, and turn the processed flowable layer into a first treated flowable layer in the first trench and a second treated flowable layer in the second trench;
- wherein the first trench and the second trench have different aspect ratios.
Dependencies are inferred from the claim text.