Method and system of junction termination extension in high voltage semiconductor devices

A method for manufacturing a semiconductor device, the method comprising:

• providing a semiconductor substrate comprising a first side and second side, wherein the semiconductor substrate is characterized by a first conductivity type;
• epitaxially growing a first semiconductor layer coupled to the first side of the semiconductor substrate, wherein the first semiconductor layer is characterized by the first conductivity type;
• epitaxially growing a second semiconductor layer coupled to the first semiconductor layer, wherein the second semiconductor layer is characterized by a second conductivity type opposite the first conductivity type, and wherein the second semiconductor layer comprises a contact region and a terminal region surrounding the contact region;
• forming a mask layer on the second semiconductor layer, wherein the mask layer is patterned with a planar region aligned with the contact region and a tapered region aligned with the terminal region of the second semiconductor layer;
• implanting ions into the terminal region of the second semiconductor layer using the mask layer to form a tapered junction termination element in the terminal region of the second semiconductor layer;
• removing the mask layer;
• and
• forming a contact structure in the contact region of the second semiconductor layer.