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US 2022/0013624 A1Published application
DRAM Capacitor Module
AssigneeMicromaterials LLC
InventorsUday Mitra, Regina Freed, Ho-yung David Hwang, Sanjay Natarajan, Lequn Liu
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Abstract
Methods of forming and processing semiconductor devices are described. Certain embodiments relate to the formation of self-aligned DRAM capacitors. More particularly, certain embodiments relate to the formation of self-aligned DRAM capacitors utilizing the formation of self-aligned growth pillars. The pillars lead to greater capacitor heights, increase critical dimension uniformity, and self-aligned bottom and top contacts.
Claims8
A DRAM capacitor comprising:
- a capacitor bottom contact and a first dielectric material on a substrate;
- a second dielectric material on the first dielectric material;
- a fourth dielectric material on the second dielectric material;
- a capacitor memory channel formed through the fourth dielectric material, the second dielectric material, and the first dielectric material;
- and
- a capacitor formed in the capacitor memory channel,
- wherein the capacitor is self-aligned with the capacitor bottom contact.
4 more elements
Dependencies are inferred from the claim text.