Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor

A semiconductor device comprising:

• a transistor;
• and
• a capacitor connected to the transistor, the capacitor including
• a lower electrode including a perovskite structure,
• an upper electrode including a perovskite structure,
• a first dielectric layer between the lower electrode and the upper electrode;
• and
• a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, between the first dielectric layer and the upper electrode.

A method of manufacturing a capacitor, the method comprising:

• forming a lower electrode having a perovskite structure;
• forming a first dielectric layer on the lower electrode, the first dielectric layer having a first dielectric constant and a first band gap energy;
• forming a second dielectric layer on the first dielectric layer, the second dielectric layer having a second dielectric constant less than the first dielectric constant and a second band gap energy greater than the first band gap energy;
• and
• forming an upper electrode having a perovskite structure on the second dielectric layer.