Micro-led device and manufacturing method thereof

A micro-LED device comprising:

• a crystal growth substrate having an upper surface covered with a mask layer, the mask layer having a plurality of openings;
• a frontplane supported by the crystal growth substrate, the frontplane including a plurality of micro-LEDs, each of which includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, and a device isolation region located between the plurality of micro-LEDs, the device isolation region including at least one metal plug electrically coupled with the second semiconductor layer;
• a middle layer supported by the frontplane, the middle layer including a plurality of first contact electrodes respectively electrically coupled with the first semiconductor layer of the plurality of micro-LEDs and at least one second contact electrode coupled with the metal plug;
• and
• a backplane supported by the middle layer, the backplane including an electric circuit electrically coupled with the plurality of micro-LEDs via the plurality of first contact electrodes and the at least one second contact electrode, the electric circuit including a plurality of thin film transistors,
• wherein the crystal growth substrate has an electrically-conductive surface,
• the plurality of openings of the mask layer includes a plurality of mask openings which define a position of the plurality of micro-LEDs and a contact opening for coupling the metal plug with the electrically-conductive surface of the crystal growth substrate, and
• each of the plurality of thin film transistors includes a semiconductor layer deposited on the frontplane and/or the middle layer.