Semiconductor device produced by bonding substrates together

A semiconductor device, comprising:

• a first substrate that includes a first interlayer insulation film and a first wiring layer having a first connection electrode, wherein the first connection electrode is configured to project by a first projection quantity h1 from the first interlayer insulation film;
• and
• a second substrate that includes a second interlayer insulation film and a second wiring layer having a second connection electrode, wherein
• the second connection electrode is configured to project by a second projection quantity h2 from the second interlayer insulation film,
• the second connection electrode is bonded on the first substrate to join with the first connection electrode, and the second connection electrode is joined with the first connection electrode, and
• at least a first part of the first interlayer insulation film and a second part of the second interlayer insulation film are joined with each other on a bonded surface.

A manufacturing method for a semiconductor device, the manufacturing method comprising:

• preparing a first substrate including a first wiring layer having a first connection electrode projecting by a first projection quantity h1 from a first interlayer insulation film;
• preparing a second substrate including a second wiring layer having a second connection electrode projecting by a second projection quantity from a second interlayer insulation film;
• and
• bonding the first connection electrode of the first substrate with the second connection electrode of the second substrate while facing them to each other and bonding the first substrate with the second substrate so that the first connection electrode and the second connection electrode are joined and at least a part of the first interlayer insulation film and a part of the second interlayer insulation film, which face to each other in a lamination direction, are joined with each other on bonded surface.

An electronic device, comprising:

• a solid imaging apparatus that includes a sensor substrate,
• wherein the sensor substrate includes a sensor-side semiconductor layer, and the sensor-side semiconductor layer includes a pixel region having a photoelectric converter, and a sensor-side wiring layer having a first wiring on a side of a surface opposite to a light-receiving surface of the sensor-side semiconductor layer,
• wherein the first wiring is via a sensor-side interlayer insulation film, and a sensor-side connection electrode projecting by a predetermined quantity from a surface of the sensor-side interlayer insulation film, and a circuit substrate, which is bonded and on the sensor substrate, including a circuit-side semiconductor layer and a circuit-side wiring layer having a second wiring on a side of the sensor-side wiring layer of the sensor substrate,
• wherein the second wiring is via a circuit-side interlayer insulation film and a circuit-side connection electrode projecting by a predetermined quantity from a surface of the circuit-side interlayer insulation film;
• and
• a signal processing circuit configured to perform processing on an output signal output from the solid imaging apparatus, wherein
• the solid imaging apparatus includes the sensor-side connection electrode and the circuit-side connection electrode joined with each other, and
• at least a part of a sensor-side interlayer insulation film and a part of a circuit-side interlayer insulation film, which face to each other in a lamination direction, are joined with each other on a bonded surface between the sensor substrate and the circuit substrate.