Image sensing device
AssigneeSK hynix Inc.
InventorJae Hyung JANG
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Abstract
An image sensing device includes a plurality of image sensor pixels including a first image sensor pixel and a second image sensor pixel and a transmission driver. The transmission driver is coupled to first and second transfer gates to apply a first transmission signal to the first transfer gate to control the first transfer gate and a second transmission signal to the second transfer gate to control the second transfer gate. A first distance between the first image sensor pixel and the transmission driver is shorter than a second distance between the second image sensor pixel and the transmission driver, and the first and second transfer gates of the first image sensor pixel are different in structure from the first and second transfer gates of the second image sensor pixel, respectively.
Claims15
An image sensing device comprising:
- a substrate;
- an image sensor pixel array supported by the substrate and structured to include a plurality of image sensor pixels that generate photocharges in response to light, the plurality of image sensor pixels including a first image sensor pixel and a second image sensor pixel, each of the first and second image sensor pixels including a first transfer gate and a second transfer gate, the first transfer gate structured to transfer photocharges generated during a first period to a first region structured to hold the photocharges, the second transfer gate structured to transfer photocharges generated during a second period to a second region structured to hold the photocharges;
- and
- a transmission driver coupled to the first and second transfer gates, and configured to apply a first transmission signal to the first transfer gate to control the first transfer gate and a second transmission signal to the second transfer gate to control the second transfer gate, wherein a first distance between the first image sensor pixel and the transmission driver is shorter than a second distance between the second image sensor pixel and the transmission driver, and
- wherein the first and second transfer gates of the first image sensor pixel are different in structure from the first and second transfer gates of the second image sensor pixel, respectively.
An image sensing device comprising:
- an image sensor pixel array including a plurality of image sensor pixels structured to include photoelectric conversion elements, respectively, that generate photocharges in response to light, each of the plurality of image sensor pixels including a first floating diffusion region adjacent to a corresponding photoelectric conversion element, a first transfer gate coupled between the photoelectric conversion element and the first floating diffusion region, a second floating diffusion region adjacent to the photoelectric conversion element but separate from the first floating diffusion region, and a second transfer gate coupled between the photoelectric conversion element and the second floating diffusion region, the first transfer gate structured to be operable to transfer first photocharges generated in the corresponding photoelectric conversion element during a first period to the first floating diffusion region which holds the first photocharges, and the second transfer gate structured to be operable to transfer second photocharges generated in the corresponding photoelectric conversion element during a second period to the second floating diffusion region which holds the second photocharges;
- and
- a transmission driver coupled to the first and second transfer gates and configured to apply a first transmission signal to the first transfer gate to operate the first transfer gate to transfer the first photocharges and a second transmission signal to the second transfer gate to operate the second transfer gate to transfer the second photocharges,
- wherein the plurality of image sensor pixels includes first to third image sensor pixels that have different signal transmission distances from the transmission driver, and
- wherein the first transfer gate of the first image sensor pixel, the first transfer gate of the second image sensor pixel and the first transfer gate of the third image sensor pixel have different structures, including at least one of a depth of the first transfer gate in a substrate, a material of a gate electrode of the first transfer gate, a thickness of a gate insulation layer of the first transfer gate, or a material of the gate insulation layer.
Dependencies are inferred from the claim text.