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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKenichi OKAZAKI, Masami JINTYOU, Takahiro IGUCHI, Yasuharu HOSAKA, Junichi KOEZUKA, Hiroyuki MIYAKE, Shunpei YAMAZAKI
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Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.
A liquid crystal display device comprising:
Dependencies are inferred from the claim text.