Nonvolatile memory device having multiple numbers of channel layers

A nonvolatile memory device comprising:

• a substrate;
• a channel structure extending in a direction perpendicular to the substrate;
• a charge storage structure disposed to be in contact with the channel structure;
• a cell electrode structure disposed to be in contact with the charge storage structure in a lateral direction;
• a control electrode structure disposed over or below the cell electrode structure on the substrate, the control electrode structure including an interlayer dielectric layer and a control electrode layer;
• a control dielectric layer disposed to be in contact with the control electrode structure;
• and
• a control channel layer disposed adjacent to the control dielectric layer and electrically connected to the channel structure,
• wherein the channel structure comprises a hole conduction layer and an electron conduction layer.
• wherein the control channel layer is a portion of the electron conduction layer configured to extend along the control dielectric layer.