Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a pad electrode;
• a surface protective film covering the pad electrode and having an opening exposing a part of the pad electrode;
• a bonding region located inside the opening in plan view;
• and
• a plurality of second grooves formed between an inner peripheral edge of the opening and an outer peripheral edge of the bonding region in plan view, wherein
• each of the plurality of second grooves extends in a first direction extending along the outer peripheral edge of the bonding region and are arranged at a predetermined interval in a second direction perpendicular to the first direction.

A manufacturing method of a semiconductor device, comprising the steps of:

• (a) forming an interlayer insulating film on a main surface of a semiconductor substrate,
• (b) forming a first laminated film in which a first metal film, a second metal film, and a third metal film are laminated in this order,
• (c) forming a pad electrode by patterning the first laminated film,
• (d) forming a surface protective film so as to cover the pad electrode,
• (e) forming an opening by performing an etching the surface protective film and the third metal film, and exposing a part of the second metal film, and
• (f) forming a first groove so as to penetrate the second metal film and reach an upper surface of the first metal film, wherein
• the pad electrode has a bonding region located inside the opening in plan view;
• and
• the first groove is arranged between an inner peripheral edge of the opening and an outer peripheral edge of the bonding region in plan view.