Misregistration Target Having Device-Scaled Features Useful in Measuring Misregistration of Semiconductor Devices

A method of measuring misregistration between at least one first layer and at least one second layer formed on a wafer in the manufacture of functional semiconductor devices, the functional semiconductor devices including functional device structures (FDSTs), the method comprising:

• providing said wafer on which is formed a target comprising:
• a plurality of measurement structures (MSTs), said plurality of MSTs being part of said first layer and said second layer;
• and
• a plurality of device-like structures (DLSTs), said plurality of DLSTs being part of at least one of said first layer and said second layer and said DLSTs sharing at least one characteristic with said FDSTs and said MSTs not sharing said characteristic with said FDSTs;
• measuring said target with a misregistration measurement tool, thereby generating an output signal;
• and
• analyzing said output signal, thereby generating a misregistration value between said layers of said target.