Semiconductor device and method for fabricating thereof

A semiconductor device comprising:

• a first level wiring disposed at a first metal level, the first level wiring including a first line wiring, a first side wall graphene film, and a first bottom graphene film, the first bottom graphene film extending along a bottom surface of the first line wiring, and the first side wall graphene film extending along a side wall of the first line wiring;
• and
• a second level wiring disposed at a second metal level higher than the first metal level, the second level wiring including a second via connected to the first line wiring, and a second line wiring connected to the second via,
• wherein a thickness of the first side wall graphene film is greater than a thickness of the first bottom graphene film.

A semiconductor device comprising:

• a first level wiring disposed at a first metal level, the first level wiring including a first ruthenium line wiring, a first insulating capping film, a first side wall graphene film, and a first bottom graphene film, the first insulating capping film extending along an upper surface of the first ruthenium line wiring, the first side wall graphene film extending along a side wall of the first ruthenium line wiring, and the first bottom graphene film extending along a bottom surface of the first ruthenium line wiring;
• an interlayer insulating film which covers a side wall of the first ruthenium line wiring and a side wall of the first insulating capping film;
• and
• a second level wiring disposed at a second metal level higher than the first metal level, the second level wiring including a second via penetrating the first insulating capping film and connected to the first ruthenium line wiring, and a second line wiring connected to the second via.