Semiconductor device and method of manufacturing the same
AssigneeFuji Electric Co., Ltd.
InventorsMasaharu YAMAJI, Taichi KARINO, Hitoshi SUMIDA, Hideaki ITOH
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Abstract
A semiconductor device includes: a wiring layer; a titanium nitride layer deposited on the wiring layer; a titanium oxynitride layer deposited on the titanium nitride layer; a titanium oxide layer deposited on the titanium oxynitride layer; and a surface passivation film deposited on the titanium oxide layer, wherein an opening penetrating the titanium nitride layer, the titanium oxynitride layer, the titanium oxide layer, and the surface passivation film is provided to expose a part of the wiring layer so as to serve as a pad.
Claims13
A semiconductor device comprising:
- a wiring layer;
- a titanium nitride layer deposited on the wiring layer;
- a titanium oxynitride layer deposited on the titanium nitride layer;
- a titanium oxide layer deposited on the titanium oxynitride layer;
- and
- a surface passivation film deposited on the titanium oxide layer.
A method of manufacturing a semiconductor device, comprising:
- depositing a metal film for wiring formation on a semiconductor substrate;
- depositing a titanium nitride layer on the metal film for wiring formation;
- depositing a titanium layer on the titanium nitride layer;
- forming a resist pattern on the titanium layer;
- delineating the metal film for wiring formation by use of the resist pattern as an etching mask to form a wiring layer;
- oxidizing a top surface of the titanium layer to form a titanium oxide layer;
- diffusing oxygen and nitrogen into the titanium layer to form a titanium oxynitride layer between the titanium nitride layer and the titanium oxide layer;
- and
- forming a surface passivation film on the titanium oxide layer.
Dependencies are inferred from the claim text.