Semiconductor devices and methods of manufacturing the same

A semiconductor device, comprising:

• a bridge free of active devices, comprising:
• a semiconductor substrate;
• an interconnect structure;
• a redistribution layer structure;
• and
• a plurality of first conductive connectors, wherein the redistribution layer structure is disposed between the interconnect structure and the plurality of first conductive connectors;
• and
• a first integrated circuit and a second integrated circuit electrically connected by the bridge, the first integrated circuit comprises a second conductive connector directly bonded to one of the first conductive connectors, the second conductive connector comprises a plurality of conductive pads and a plurality of conductive vias between the plurality of conductive pads, and one of the plurality of conductive vias is not overlapped with others of the plurality of the conductive vias while the others of the plurality of the conductive vias are overlapped with one another.

A method of manufacturing a semiconductor device, comprising:

• forming a bridge free of active devices, comprising:
• forming a plurality of first conductive features in a plurality of dielectric layers on a substrate by a damascene process, to form an interconnect structure;
• forming a plurality of second conductive features in at least one polymer layer on the plurality of dielectric layers by a lithography process, to form a redistribution layer structure over the interconnect structure;
• and
• forming a plurality of conductive connectors to electrically connect to the plurality of second conductive features;
• and
• bonding the bridge onto a first integrated circuit and a second integrated circuit, to electrically connect the first integrated circuit and the second integrated circuit.