High Temperature Barrier Film For Molten Wafer Infusion
AssigneesMenlo Microsystems, Inc., Corning Incorporated
InventorsJeff S. Baloun, Willibrordus Gerardus Maria van den Hoek
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Abstract
A metallized via structure may comprise a via hole, a barrier layer deposited within the via hole, and a metallic plug disposed within the via hole. The via hole may be formed in a device package, and the via hole may be defined by at least one interior wall of the device package. The barrier layer may be disposed upon the at least one interior wall to form a barrier layer lined via hole. The metallic plug may be disposed within the barrier lined via hole by pressurized injection of a molten metal, such that the barrier layer is situated between the metallic plug and the at least one interior wall. The barrier layer may be situated to prevent the metallic plug from contacting the interior wall.
Claims25
A metallized via structure, comprising:
- a via hole formed through a substrate, the via hole defined by at least one interior wall of the substrate;
- a barrier layer disposed upon the at least one interior wall to form a barrier layer lined via hole;
- and
- a metallic plug disposed within the barrier layer lined via hole by pressurized injection of molten metal, such that the barrier layer is situated between the metallic plug and the at least one interior wall, the barrier layer configured to prevent the metallic plug from contacting the interior wall.
The metalized via structure of claim 21, wherein the metallic plug comprises a metal selected from aluminum (Al), gold (Au), silver (Ag), copper (Cu), tin (Sn), lead (Pb), magnesium (Mg), and alloys thereof.
A method of fabricating a metalized via structure, comprising:
- forming a via hole in a substrate, the via hole defined by at least one interior wall of the substrate;
- disposing a barrier layer upon the at least one interior wall to form a barrier layer lined via hole;
- and
- disposing a metallic plug within the barrier layer lined via hole such that the barrier layer is situated between the metallic plug and the at least one interior wall, the barrier layer configured to prevent the metallic plug from contacting the interior wall.
A through-glass via (TGV) structure, comprising:
- a via hole formed in a glass substrate, the via hole defined by at least one interior surface of the glass substrate;
- a barrier layer disposed upon the at least one interior wall to form a barrier layer lined via hole;
- and
- a metallic plug disposed within the barrier layer lined via hole by pressurized injection of molten metal, such that the barrier layer is situated between the metallic plug and the at least one interior wall.
The TGV structure of claim 25, wherein the metallic plug comprises a metal selected from aluminum (Al), gold (Au), silver (Ag), copper (Cu), tin (Sn), lead (Pb), magnesium (Mg), and alloys thereof.
Dependencies are inferred from the claim text.