Interposer and semiconductor package including same

An interposer comprising:

• a base layer including a first surface and a second surface opposite the first surface;
• a redistribution structure on the first surface of the base layer and including a conductive redistribution pattern;
• a first lower protection layer on the second surface of the base layer;
• a lower conductive pad on the first lower protection layer;
• a through electrode connecting the conductive redistribution pattern and the lower conductive pad;
• a second lower protection layer on the first lower protection layer and contacting at least a portion of the lower conductive pad;
• and
• an indentation formed in a scribe lane region proximate to an outer edge region of the interposer to provide a continuous curvilinear sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

An interposer comprising:

• a base layer including a first surface and a second surface opposite the first surface;
• a redistribution structure on the first surface of the base layer and including a conductive redistribution pattern;
• a first lower protection layer on the second surface of the base layer;
• a lower conductive pad on the first lower protection layer;
• a through electrode connecting the conductive redistribution pattern and the lower conductive pad;
• a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad;
• and
• an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.