Power semiconductor device
AssigneeHitachi Astemo, Ltd.
InventorsHiromi SHIMAZU, Yujiro KANEKO, Toru KATO, Akira MATSUSHITA, Eiichi IDE
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Abstract
A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.
Claims15
A power semiconductor device, comprising:
- a first insulating substrate on which a first conductor layer is arranged on one surface;
- a first conductor that is connected to the first conductor layer via a first connecting material;
- and
- a semiconductor element that is connected to the first conductor via a second connecting material,
- wherein, when viewed from a direction perpendicular to an electrode surface of the semiconductor element,
- the first conductor includes a peripheral portion formed larger than the semiconductor element, and
- a first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.
A method of manufacturing a power semiconductor device, comprising:
- a first step of forming a first recess in a first conductor along a pulling-out direction by pulling-out;
- a second step of arranging a first conductor layer of an insulating substrate in a surface of the first conductor, where the first recess is formed, via a first connecting material, and arranging a semiconductor element in a surface on an opposite side of the surface, where the first recess is formed, via another connecting material;
- and
- a third step of melting the first connecting material such that a thickness of the first connecting material in the first recess becomes thicker than the first connecting material in other portions.
Dependencies are inferred from the claim text.