Electronic device and manufacturing method thereof
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorANBANG ZHANG
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Abstract
Some embodiments of the disclosure provide an electronic device. The electronic device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer, and having a band gap greater than a band gap of the first nitride semiconductor layer; a group III-V dielectric layer disposed on the second nitride semiconductor layer; a gate electrode disposed on the second nitride semiconductor layer; and a first passivation layer disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode by the first passivation layer.
Claims21
An electronic device, comprising:
- a substrate;
- and
- a transistor, comprising:
- a first nitride semiconductor layer disposed on the substrate;
- a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer;
- and
- a source electrode, a drain electrode and a gate electrode disposed directly on the second nitride semiconductor layer;
- and
- a multi-layer passivation disposed on the second nitride semiconductor layer,
- wherein the multi-layer passivation comprises a surface state compensating layer directly disposed on the second nitride semiconductor layer and a low-k dielectric layer disposed on the surface state compensating layer.
An electronic device, comprising:
- a substrate;
- a first nitride semiconductor layer disposed on the substrate;
- a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer;
- and
- a multi-layer passivation disposed on the second nitride semiconductor layer, wherein the multi-layer passivation comprises a silicon nitride layer directly disposed on the second nitride semiconductor layer and a low-k dielectric layer disposed on the silicon nitride layer layer.
A method for forming an electronic device, comprising:
- providing a substrate,
- forming a first nitride semiconductor layer on a substrate,
- forming a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer has a bandgap greater than that of the first nitride semiconductor layer;
- and
- forming a multi-layer passivation on the second nitride semiconductor layer, comprising:
- forming a silicon nitride layer directly on the second nitride semiconductor layer, and
- forming a low-k dielectric layer on the silicon nitride layer;
- and
- forming a source electrode, a gate electrode and a drain electrode of a transistor, wherein the gate electrode directly on the second nitride semiconductor layer.
Dependencies are inferred from the claim text.