Method for manufacturing semiconductor device and semiconductor device
AssigneeMitsubishi Electric Corporation
InventorKohei NISHIGUCHI
Life of this patent
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Abstract
A method for manufacturing a semiconductor device (10) includes, in the following order: forming a first insulating film (14) on a semiconductor substrate (12); forming, on the first insulating film (14), wiring in which at least the uppermost layer is made of Au (16); implanting ions, which do not impair insulating properties even when implanted into the insulating film (14), into the upper surface of the wiring (16) and a region not covered with the wiring (16) on the upper surface of the first insulating film (14); and forming a second insulating film (18) that covers the wiring (16).
Claims13
A method for manufacturing a semiconductor device comprising, in the following order:
- forming a first insulating film on a semiconductor substrate;
- forming, on the first insulating film, wiring in which at least an uppermost layer is made of Au;
- implanting ions, that do not impair insulating properties even when implanted into the insulating film, into an upper surface of the wiring and a region not covered with the wiring on an upper surface of the first insulating film;
- and
- forming a second insulating film that covers the wiring.
A method for manufacturing a semiconductor device comprising:
- forming a first insulating film on a semiconductor substrate;
- forming, on the first insulating film, wiring in which at least an uppermost layer is made of Au;
- forming a second insulating film that covers the wiring;
- and
- implanting ions, that do not impair insulating properties even when implanted into the insulating film, into an upper surface of the wiring and a region not covered with the wiring on an upper surface of the first insulating film,
- wherein a peak of a distribution of the ions implanted into each of the wiring and the second insulating film is in a vicinity of an interface between the upper surface of the wiring and the second insulating film.
A method for manufacturing a semiconductor device comprising, in the following order:
- forming a first insulating film on a semiconductor substrate;
- forming, on the first insulating film, wiring in which at least an uppermost layer and at least an upper portion of a side surface are made of Au;
- forming a resist in a region not covered with the wiring on an upper surface of the first insulating film;
- deforming the resist by heat treatment to expose at least a part of a region in contact with the resist on the side surface of the wiring;
- implanting ions into an upper surface of the wiring, at least the upper portion of the side surface of the wiring, and an upper surface of the resist by an oblique ion implantation method;
- removing the resist;
- and
- forming a second insulating film that covers the wiring.
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film on the semiconductor substrate;
- wiring in which at least an uppermost layer is made of Au on the first insulating film;
- and
- a second insulating film covering the wiring,
- wherein an insulating non-destructive element exists in a vicinity of an upper surface of the wiring and in a vicinity of a region not covered with the wiring on an upper surface of the first insulating film at a concentration of 1×1017 cm−3 or more and 1×1021 cm−3 or less.
-12. (canceled)
Dependencies are inferred from the claim text.