Ultraviolet radiation shield layer
AssigneeRaytheon Company
InventorsMichael J. Rondon, Shannon F. Wilkey, Michael V. Liguori
Life of this patent
Estimating the term…
Abstract
A method is provided to fabricate a wafer including a bonding layer interposed between a device wafer and a handle wafer. The method includes performing a first deposition process to deposit an ultraviolet (UV) shield layer on a backside surface of the handle wafer. A second deposition process is performed to deposit a stress compensation layer on an exposed surface of the UV shield layer. The UV shield layer blocks UV energy generated while performing the second deposition process from reaching the bonding layer.
Claims20
A method of fabricating a wafer, the method comprising:
- performing a first deposition process on a wafer stack, the wafer stack including a bonding layer interposed between a device wafer and a handle wafer;
- depositing an ultraviolet (UV) shield layer on a backside surface of the handle wafer according to the first deposition process;
- and
- performing a second deposition process on the wafer stack to deposit a stress compensation layer on an exposed surface of the UV shield layer,
- wherein the UV shield layer blocks UV energy generated while performing the second deposition process from reaching the bonding layer.
A method of fabricating a wafer, the method comprising:
- performing a first deposition process on a wafer stack, the wafer stack including a bonding layer interposed between a device wafer and a handle wafer;
- depositing an ultraviolet (UV) shield layer on a backside surface of the handle wafer according to the first deposition process;
- performing a second deposition process on the wafer stack to deposit a stress compensation layer on an exposed surface of the UV shield layer,
- blocking UV energy generated from reaching the bonding layer using the UV shield layer while depositing the stress compensation layer;
- and
- flexing the wafer stack in response to depositing the stress compensation layer.
A semiconductor device comprising:
- a wafer stack including a bonding layer interposed between a device wafer and a handle wafer;
- an ultraviolet (UV) shield layer on a backside surface of the handle wafer;
- and
- a stress compensation layer on an exposed surface of the UV shield layer,
- wherein the UV shield layer is configured to block UV energy from reaching the bonding layer.
Dependencies are inferred from the claim text.