Plasma processing apparatus and semiconductor fabrication method using the same

A plasma processing apparatus, comprising:

• a plasma electrode;
• an electrostatic chuck on the plasma electrode;
• and
• a diode board below the plasma electrode,
• wherein the electrostatic chuck includes:
• a macroheater layer;
• a microheater layer on the macroheater layer;
• and
• a chuck electrode on the microheater layer,
• wherein the microheater layer includes:
• an inner heater part on an inside of the microheater layer;
• and
• an outer heater part outside the inner heater part,
• wherein the inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer,
• wherein the outer heater part includes:
• a first outer heater in a first outer region that is outside and circumferentially surrounds the first inner region;
• and
• a second outer heater in a second outer region that is outside and circumferentially surrounds the first outer region, and
• wherein each of a thickness in a diameter direction of the first outer region and a thickness in the diameter direction of the second outer region is less than a thickness in the diameter direction of the first inner region.

A semiconductor fabrication method, comprising:

• placing a wafer on an electrostatic chuck;
• measuring a temperature of the wafer;
• and
• adjusting the temperature of the wafer,
• wherein the electrostatic chuck includes a microheater layer and a chuck electrode on the microheater layer,
• wherein the microheater layer includes:
• a first inner region that circumferentially surrounds a center of the microheater layer;
• a second inner region that is outside and circumferentially surrounds the first inner region;
• a first outer region that is outside and circumferentially surrounds the second inner region;
• and
• a second outer region that is outside and circumferentially surrounds the first outer region,
• wherein a thickness in a diameter direction of the first outer region and a thickness in the diameter direction of the second outer region are less than a thickness in the diameter direction of the first inner region and a thickness in the diameter direction of the second inner region, and
• wherein adjusting the temperature of the wafer includes:
• controlling a temperature of the first outer region to a first temperature;
• and
• controlling a temperature of the second outer region to a second temperature,
• wherein the second temperature is distinguished from the first temperature.