Plasma treatment apparatus, semiconductor manufacturing apparatus, and manufacturing method of semiconductor device
AssigneeToshiba Memory Corporation
InventorsYasuhito YOSHIMIZU, Hiroyuki YASUI, Yuya AKEBOSHI, Fuyuma ITO
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Abstract
A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.
Claims15
1-7. (canceled)
A manufacturing method of a semiconductor device comprising:
- providing a plasma treatment apparatus including a discharge device and a nonmetallic tube, the discharge device generating plasma under atmospheric pressure, and the plasma generated in the discharge device advancing through the nonmetallic tube;
- treating a surface of a semiconductor wafer by irradiating the plasma released from the nonmetallic tube toward the semiconductor wafer in an environment under atmospheric pressure.
A manufacturing method of a semiconductor device, comprising:
- generating radicals in liquid using atmospheric-pressure plasma;
- and
- promoting or suppressing etching of an object to be treated.
21-24. (canceled)
Dependencies are inferred from the claim text.