Method for forming and patterning a layer and/or substrate
AssigneeApplied Materials, Inc.
InventorsTakehito KOSHIZAWA, Rui CHENG, Tejinder SINGH, Hidetaka OSHIO
Life of this patent
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Abstract
In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.
Claims20
A method for forming features for semiconductor processing, the method comprising:
- forming a first mandrel and a second mandrel on a substrate;
- forming a first spacer along a first sidewall of the first mandrel and a second spacer along a second sidewall of the second mandrel, a gap being defined between the first spacer and the second spacer;
- and
- filling the gap by a gap-filling material, the gap-filling material comprising a doped silicon material different that a material of the first mandrel and the second mandrel.
Dependencies are inferred from the claim text.