Thin-film transistors having hybrid crystalline semiconductor channel layer and methods of forming the same

A transistor fabrication method comprising:

• forming a gate electrode in a first dielectric layer;
• depositing a gate dielectric layer on the gate electrode and the first dielectric layer;
• depositing an amorphous silicon layer on the gate dielectric layer;
• forming a seed layer on the amorphous silicon layer, the seed layer comprising a crystalline metal oxide semiconductor material;
• annealing the amorphous silicon layer to form a single-crystal silicon (c-Si) layer;
• patterning the seed layer and the c-Si layer to form a hybrid channel layer;
• and
• forming source and drain electrodes on the hybrid channel layer.

A transistor comprising:

• a hybrid channel layer comprising:
• a single-crystal silicon (c-Si) layer;
• and
• a seed layer comprising a crystalline metal oxide semiconductor material;
• a gate electrode;
• a gate dielectric layer disposed between the gate electrode and the hybrid channel layer;
• and
• source and drain electrodes electrically contacting source and drain regions of the hybrid channel layer.