Seed layer for ferroelectric memory device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCHUN-CHIEH LU, SAI-HOOI YEONG, YU-MING LIN
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Abstract
A method includes: providing a bottom layer; depositing a first seed layer over the bottom layer, the first seed layer having at least one of a tetragonal crystal phase and an orthorhombic crystal phase; depositing a dielectric layer over the bottom layer adjacent to the first seed layer, the dielectric layer including an amorphous crystal phase; depositing an upper layer over the dielectric layer; performing a thermal operation on the dielectric layer; and cooling the dielectric layer, wherein after the cooling the dielectric layer becomes a ferroelectric layer.
Claims21
A method, comprising:
- providing a bottom layer;
- depositing a first seed layer over the bottom layer;
- performing a surface treatment on the first seed layer, wherein after the surface treatment the first seed layer includes at least one of a tetragonal crystal phase and an orthorhombic crystal phase;
- depositing a dielectric layer over the bottom layer adjacent to the first seed layer, the dielectric layer including an amorphous crystal phase;
- depositing an upper layer over the dielectric layer;
- performing a thermal operation on the dielectric layer;
- and
- cooling the dielectric layer, wherein after the cooling the dielectric layer becomes a ferroelectric layer.
A method, comprising:
- forming a bottom layer over a substrate;
- depositing a first seed layer over the bottom layer, the first seed layer having an amorphous crystal phase;
- performing a first treatment onto the first seed layer, wherein after the first treatment the first seed layer has an orthorhombic crystal phase;
- depositing a layer stack over the first seed layer, the layer stack including a plurality of first dielectric layers and a plurality of second dielectric layers alternatingly arranged with the first dielectric layers;
- forming a capping layer over the layer stack;
- performing a thermal operation on the substrate;
- and
- cooling the substrate, wherein after the cooling the layer stack becomes a ferroelectric layer.
17-20. (canceled)
A method, comprising:
- depositing a seed layer having an amorphous crystal phase over a bottom layer;
- treating a surface of the seed layer, wherein after the treating the seed layer includes an oxide form of a first element and having at least one of a tetragonal crystal phase and an orthorhombic crystal phase;
- depositing a stack of dielectric layers over the seed layer, the stack of dielectric layers including an amorphous crystal phase;
- depositing a capping layer over the stack of dielectric layers;
- performing a thermal operation on the stack of dielectric layers;
- and
- cooling the stack of dielectric layers, wherein after the cooling the stack of dielectric layers becomes a ferroelectric layer, the ferroelectric layer including an oxide of a second element, wherein the first element and the second element are selected from a same group.
Dependencies are inferred from the claim text.