Plasma etcher edge ring with a chamfer geometry and impedance design

A method of processing a semiconductor device with a plasma etcher, the method comprising:

• providing the semiconductor device on an electrostatic chuck of the plasma etcher;
• providing an edge ring around the semiconductor device and the electrostatic chuck,
• wherein the edge ring includes:
• a circular bottom portion with an opening sized to receive the electrostatic chuck,
• a circular top portion integrally connected to a first top part of the circular bottom portion, and
• a chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion,
• wherein the chamfer portion surrounds an edge of the semiconductor device, and
• wherein the chamfer portion prevents erosion of the edge ring based on utilization of the plasma etcher;
• and
• causing a plasma to be provided to the semiconductor device,
• wherein the plasma etches one or more portions of the semiconductor device.

A plasma etcher, comprising:

• a chamber;
• a plasma gas inlet attached to the chamber and to receive a plasma gas;
• an electrostatic chuck provided in the chamber and to support a semiconductor device;
• and
• an edge ring provided in the chamber and to surround the electrostatic chuck and the semiconductor device,
• wherein the edge ring includes:
• a circular bottom portion with an opening sized to receive the electrostatic chuck,
• a circular top portion integrally connected to a first top part of the circular bottom portion, and
• a chamfer portion integrally connected to a second top part of the circular bottom portion and integrally connected to a side of the circular top portion,
• wherein the chamfer portion is arranged to surround an edge of the semiconductor device, and
• wherein the chamfer portion includes an inner surface that is angled radially outward from the edge of the semiconductor device to prevent erosion of the edge ring by the plasma gas.