Hydrogen co-gas when using a chlorine-based ion source material
OwnerNeil K. Colvin, Neil Bassom +1inventors
InventorsNeil K. Colvin, Neil Bassom, Xiangyang Wu
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OwnerNeil K. Colvin, Neil Bassom +1inventors
InventorsNeil K. Colvin, Neil Bassom, Xiangyang Wu
Estimating the term…
An ion implantation system has an aluminum trichloride source material. An ion source is configured to ionize the aluminum trichloride source material and form an ion beam. The ionization of the aluminum trichloride source material further forms a by-product having a non-conducting material containing chlorine. A hydrogen introduction apparatus is configured to introduce a reducing agent including hydrogen to the ion source. The reducing agent is configured to alter a chemistry of the non-conducting material to produce a volatile gas by-product. A beamline assembly is configured to selectively transport the ion beam, and an end station is configured to accept the ion beam for implantation of ions into a workpiece.
An ion implantation system, comprising:
An ion implantation system, comprising:
A method for implanting aluminum ions into a workpiece, the method comprising:
A method for implanting ions into a workpiece, the method comprising:
Dependencies are inferred from the claim text.