Nanocrystalline high-k low-leakage thin films

Abstract

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO3 and BaTiO3—Al2O3 bi-layer thin films based on nanocry stalline BaTiO3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiO3 films having tuned Curie temperatures. Further provided are capacitive components, comprising: a plurality of films, the plurality of films comprising: a first grained film component, the first grained film component comprising at least one of SrTiO3, BaTiO3, and (Ba, Sr)TiO3, and the first grained film component being characterized as being at least partially polymorphic crystalline in nature; a second film component contacting the first grained film component, the second film component optionally comprising Al2O3, and the first grained film component optionally defining an average grain size of less than about 10 micrometers.

Dependencies are inferred from the claim text.