Determine signal and noise characteristics centered at an optimized read voltage

A method, comprising:

• applying, by a device having a plurality of memory cells, a plurality of first voltages to the plurality of memory cells;
• determining, for the plurality of first voltages respectively, a plurality of first counts of memory cells, among the plurality of memory cells, having a predetermined state when the first voltages are applied to the plurality of memory cells;
• and
• estimating, based on the plurality of first counts for the plurality of first voltages respectively, a second count of memory cells, among the plurality of memory cells, having threshold voltages in a predefined region centered at a second voltage that is different from the first voltages.

A memory sub-system, comprising:

• a processing device;
• and
• at least one memory device, the memory device having a plurality of memory cells formed on an integrated circuit die;
• wherein the processing device is configured to transmit, to the memory device, a command configured to identify the plurality of memory cells;
• and
• wherein in response to the command, the memory device is configured to:
• apply a plurality of first voltages to the plurality of memory cells;
• determine, for the plurality of first voltages respectively, a plurality of first counts of memory cells, among the plurality of memory cells, having a predetermined state when the first voltages are applied to the plurality of memory cells;
• and
• estimate, based on the plurality of first counts for the plurality of first voltages respectively, a second count of memory cells, among the plurality of memory cells, having threshold voltages in a predefined region centered at a second voltage that is different from the first voltages.