Memory device and program operation thereof
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsZhichao Du, Yu Wang, Haibo Li, Ke Jiang, Ye Tian
Life of this patent
Estimating the term…
Abstract
In certain aspects, a memory device includes a memory string including a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor, and a peripheral circuit coupled to the memory string. The peripheral circuit is configured to in response to an interrupt during a program operation on a select memory cell of the plurality of memory cells, turn on at least one of the DSG transistor or the SSG transistor. The peripheral circuit is also configured to suspend the program operation after turning on the at least one of the DSG transistor or the SSG transistor.
Claims20
A memory device, comprising:
- a memory string comprising a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor;
- and
- a peripheral circuit coupled to the memory string and configured to:
- in response to an interrupt during a program operation on a select memory cell of the plurality of memory cells, turn on at least one of the DSG transistor or the SSG transistor;
- and
- suspend the program operation after turning on the at least one of the DSG transistor or the SSG transistor.
A system, comprising:
- a memory device configured to store data and comprising:
- a memory string comprising a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor;
- and
- a peripheral circuit coupled to the memory string and configured to:
- initiate a program operation on a select memory cell of the plurality of memory cells;
- receive an interrupt command during the program operation;
- in response to receiving the interrupt command, turn on at least one of the DSG transistor or the SSG transistor;
- and
- suspend the program operation after turning on the at least one of the DSG transistor or the SSG transistor;
- a memory controller coupled to the memory device and configured:
- transmit a program command to the peripheral circuit to initiate the program operation;
- and
- transmit the interrupt command after the program command to the peripheral circuit;
- and
- a connector configured to couple the system to a host.
A method for operating a memory device comprising a memory string, the memory string comprising a drain select gate (DSG) transistor, a plurality of memory cells, and a source select gate (SSG) transistor, the method comprising:
- initiating a program operation on a select memory cell of the plurality of memory cells;
- receiving an interrupt command during the program operation;
- in response to receiving the interrupt command, turning on at least one of the DSG transistor or the SSG transistor;
- and
- suspending the program operation after turning on the at least one of the DSG transistor or the SSG transistor.
Dependencies are inferred from the claim text.