Control logic assemblies
AssigneeMicron Technology, Inc.
InventorsKurt D. Beigel, Scott E. Sills
Life of this patent
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Abstract
A semiconductor device comprises a stack structure comprising decks each comprising a memory element level comprising memory elements, and a control logic level in electrical communication with the memory element level and comprising control logic devices. At least one of the control logic devices of the control logic level of one or more of the decks comprises at least one device exhibiting a gate electrode shared by neighboring vertical transistors thereof. A control logic assembly, a control logic device, an electronic system, a method of forming a control logic device, and a method of operating a semiconductor device are also described.
Claims20
A control logic assembly comprising control logic devices selected from the group comprising decoders, sense amplifiers, word line drivers, repair devices, memory test devices, multiplexers, error checking and correction devices, and self-refresh/wear leveling devices, at least one of the control logic devices comprising at least one device exhibiting one or more gate electrodes shared by neighboring vertical transistors thereof.
A control logic assembly, comprising:
- complementary metal-oxide-semiconductor (CMOS) circuitry comprising:
- a gate electrode horizontally interposed between and shared by a vertical transistor and an additional vertical transistor neighboring the vertical transistor in a first horizontal direction;
- and
- an additional gate electrode operatively associated with one of the vertical transistor and the additional vertical transistor but not shared with another vertical transistor neighboring the one of the vertical transistor and the additional vertical transistor in the first horizontal direction.
A control logic assembly, comprising:
- complementary metal-oxide-semiconductor (CMOS) circuitry comprising:
- a first gate electrode horizontally interposed between and shared by a first vertical transistor and a second vertical transistor neighboring the first vertical transistor in a first horizontal direction;
- and
- a second gate electrode interposed between and shared by the second vertical transistor and a third vertical transistor neighboring the second vertical transistor in the first horizontal direction.
Dependencies are inferred from the claim text.