Dynamic voltage setting optimization during lifetime of a memory device

A system comprising:

• a memory device comprising a plurality of memory segments;
• and
• a processing device, operatively coupled to the plurality of memory segments, to periodically perform dynamic voltage optimization operations for each of the plurality of memory segments, the operations comprising:
• determining whether a number of operational cycles performed on a memory segment satisfies a cycle threshold criterion specific to the memory segment;
• responsive to determining that the number of operational cycles satisfies the cycle threshold criterion, determining a bit error rate associated with the memory segment;
• determining whether the bit error rate satisfies an error threshold criterion specific to the memory segment;
• and
• responsive to determining that the bit error rate satisfies the error threshold criterion, adjusting a level of a sensing voltage applied to the memory segment.

A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:

• setting an initial level of sensing voltage based on one or more characteristics of a segment of a memory device;
• setting a count for operational cycles for the segment of a memory device;
• responsive to determining, by the processing device, that a number of operational cycles performed on the segment of the memory device has reached the set count of operational cycles, determining a need to adjust the sensing voltage with respect to the initial level of sensing voltage;
• and
• adjusting the sensing voltage to a new level based on wearing of the segment of the memory device during the number of operational cycles performed on the segment of the memory device.