Silicon Waveguide Photodetector For In-Line Power Monitoring
OwnerMeer Nazmus Sakib, Ranjeet Kumar +2inventors
InventorsMeer Nazmus Sakib, Ranjeet Kumar, Haisheng Rong, Chaoxuan Ma
Life of this patent
Estimating the term…
Abstract
In one embodiment, an apparatus includes: a waveguide formed of a PN junction, the waveguide to propagate optical power, the PN junction having a P region adjacent to an N region; and a silicon monitor photodetector formed of the PN junction and in-line with the waveguide to measure the optical power. The silicon monitor photodetector may further be formed of a P-doped region adjacent to the P region and an N-doped region adjacent to the N region. Other embodiments are described and claimed.
Claims20
An apparatus comprising:
- a waveguide formed of a PN junction, the waveguide to propagate optical power, the PN junction having a P region adjacent to an N region;
- and
- a silicon monitor photodetector formed of the PN junction and in-line with the waveguide to measure the optical power, the silicon monitor photodetector further formed of a P-doped region adjacent to the P region and an N-doped region adjacent to the N region.
A method comprising:
- propagating optical power through a waveguide formed of a PN junction having a P region adjacent to an N region, the waveguide formed on a photonic integrated circuit (PIC);
- and
- measuring the optical power using a silicon monitor photodetector formed of the PN junction and in-line with the waveguide, the silicon monitor photodetector further comprising a P-doped region adjacent to the P region and an N-doped region adjacent to the N region.
The method of claim 15, further comprising measuring the second optical power of a modulated optical signal output by the functional circuit, the functional circuit comprising a modulator.
A system comprising:
- a photonic integrated circuit comprising:
- a first waveguide formed of a PN junction, the first waveguide to propagate first optical power, the PN junction having a P region adjacent to an N region;
- and
- a first silicon monitor photodetector formed of the PN junction and in-line with the first waveguide to measure the first optical power, the first silicon monitor photodetector further comprising a P-doped region adjacent to the P region and an N-doped region adjacent to the N region;
- a modulator coupled to the first waveguide, the modulator to modulate the first optical power with a modulated signal to output a modulated optical signal;
- a second waveguide to communicate the modulated optical signal;
- and
- a second silicon monitor photodetector in-line with the second waveguide to measure second optical power of the modulated optical signal;
- and
- a transceiver coupled to the second waveguide to output the modulated optical signal.
Dependencies are inferred from the claim text.