Semiconductor pressure sensor and manufacturing method therefor
AssigneeMitsubishi Electric Corporation
InventorKimitoshi SATO
Life of this patent
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Abstract
A semiconductor pressure sensor according to the present disclosure includes: a first silicon substrate; a first silicon oxide film provided on the first silicon substrate and forming a closed space together with the first silicon substrate; a second silicon substrate provided on the first silicon oxide film; a gauge resistor provided on a surface layer of a surface of the second silicon substrate opposite to a surface on which the first silicon oxide film is provided at a position overlapping with the closed space in a plan view; a first electrode electrically connected to one end of the gauge resistor; and a second electrode electrically connected to another end of the gauge resistor.
Claims9
A semiconductor pressure sensor comprising:
- a first silicon substrate;
- a first silicon oxide film provided on the first silicon substrate and forming a closed space together with the first silicon substrate;
- a second silicon substrate provided on the first silicon oxide film;
- a gauge resistor provided on a surface layer of a surface of the second silicon substrate opposite to a surface on which the first silicon oxide film is provided at a position overlapping with the closed space in a plan view;
- a first electrode electrically connected to one end of the gauge resistor;
- and
- a second electrode electrically connected to another end of the gauge resistor.
A manufacturing method for a semiconductor pressure sensor, comprising steps of:
- (a) preparing a first silicon substrate;
- (b) preparing a second silicon substrate;
- (c) forming a first silicon oxide film on the second silicon substrate so that an outer edge portion is thicker than an inner portion;
- (d) bonding the first silicon substrate and the second silicon substrate so as to sandwich the first silicon oxide film;
- (e) forming a gauge resistor by injecting impurities into a surface layer of a surface of the second silicon substrate opposite to a surface on which the first silicon oxide film is formed at a position overlapping with the inner portion in a plan view;
- (f) forming a first diffusion wiring so as to come into contact with one end of the gauge resistor by injecting impurities into the surface layer of the surface of the second silicon substrate opposite to the surface on which the first silicon oxide film is formed;
- (g) forming a second diffusion wiring so as to come into contact with another end of the gauge resistor by injecting impurities into the surface layer of the surface of the second silicon substrate opposite to the surface on which the first silicon oxide film is formed;
- (h) forming a first electrode on the first diffusion wiring;
- and
- (i) forming a second electrode on the second diffusion wiring.
Dependencies are inferred from the claim text.