GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFER

Abstract

The present invention is aimed at providing: a GaN substrate wafer having an improved productivity, which can be preferably used for the production of a nitride semiconductor device in which a device structure is arranged on a GaN substrate having a carrier concentration increased by doping; and a method of producing the same. Provided is a (0001)-oriented GaN wafer which includes a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween. In this GaN wafer, the second region has a minimum thickness of 20 μm to 300 μm, and contains a region having a higher donor impurity total concentration than the first region. In the second region, a region within a specific length from a main surface of the Ga-polar side of the GaN substrate wafer is defined as a main doped region, and the second region may be doped such that at least the main doped region has a donor impurity total concentration of 1×1018 atoms/cm3 or higher.

Dependencies are inferred from the claim text.