Electrodeposition of nanotwinned copper structures
AssigneeLam Research Corporation
InventorsStephen J. Banik, II, Bryan L. Buckalew, Justin Oberst, Bhuvan Dua, Anica Nicole Neumann, Thomas Anand Ponnuswamy
Life of this patent
Estimating the term…
Loading patent…
AssigneeLam Research Corporation
InventorsStephen J. Banik, II, Bryan L. Buckalew, Justin Oberst, Bhuvan Dua, Anica Nicole Neumann, Thomas Anand Ponnuswamy
Estimating the term…
A copper structure having a high density of nanotwins is deposited on a substrate. Electroplating conditions for depositing a nanotwinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nanotwinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nanotwinned copper structure is deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structure is deposited at a relatively low flow rate.
A method of depositing a nanotwinned copper structure, the method comprising:
An apparatus comprising:
Dependencies are inferred from the claim text.