Method of manufacturing semiconductor device, and recording medium

A substrate processing apparatus, comprising:

• a substrate process chamber having a plasma generation space in which a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space;
• a substrate mounting table installed inside the substrate processing space and configured to mount a substrate thereon;
• an inductive coupling structure provided with a coil installed so as to be wound around an outer periphery of the plasma generation space;
• a substrate support table elevating part configured to raise or lower the substrate mounting table;
• a gas supply part configured to supply the processing gas to the plasma generation space;
• and
• a controller configured to be capable of controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value of the high-frequency power and spaced apart from a lower end of the coil.