Semiconductor Optical Electrode

Abstract

Provided is a semiconductor photoelectrode which maintains a light energy conversion efficiency for a long time. In the semiconductor photoelectrode, using a conductive substrate including a III-V group compound semiconductor, a semiconductor thin film including a III-V group compound semiconductor having a photocatalytic function is disposed on the substrate, and an oxygen generation co-catalyst layer having an oxygen generation co-catalytic function for the semiconductor thin film is disposed on the semiconductor thin film. Between the semiconductor thin film and the oxygen generation co-catalyst layer, a semiconductor thin film including a III-V group compound semiconductor having a lattice constant smaller than that of the semiconductor thin film in a plane perpendicular to a crystal growth direction is disposed.

Dependencies are inferred from the claim text.