Highly-ordered nano-structure array and Fabricating Method thereof

A highly-ordered nano-structure array formed on a substrate, wherein said highly-ordered nano-structure array comprises a plurality of highly-ordered nano-structure units, each of said plurality of highly-ordered nano-structure units forms a receiving compartment, one end of said receiving compartment opposite to said substrate has an opening, each of said plurality of highly-ordered nano-structure units comprises:

• a plurality of thin film layers, wherein any two adjacent thin film layers of said plurality of thin film layers are made of different materials, said plurality of thin film layers comprises:
• a first thin film layer, wherein a periphery and a bottom of said receiving compartment are defined by an inner surface of a surrounding portion of said first thin film layer and a top surface of a bottom portion of said first thin film layer respectively, said first thin film layer is made of at least one material selected from the group consisting of:
• metal, alloy, oxide, nitride and sulfide;
• and
• a second thin film layer, wherein a bottom portion of said second thin film layer is located between said substrate and said bottom portion of said first thin film layer, said surrounding portion of said first thin film layer is located between a surrounding portion of said second thin film layer and said receiving compartment, said second thin film layer is made of at least one material selected from the group consisting of:
• metal, alloy, oxide, nitride and sulfide.

A fabricating method of highly-ordered nano-structure array comprising following steps of:

• Step A:
• forming a sacrificial layer on a substrate, wherein said substrate is a semiconductor substrate, said sacrificial layer is made of at least one material selected from the group consisting of:
• semiconductor epitaxial structure, metal, and alloy;
• Step B:
• patterning said sacrificial layer to provide a plurality of recesses;
• Step C:
• forming at least one thin film layer on a top surface of said sacrificial layer and an inner surface of each of said plurality of recesses;
• Step D:
• etching said at least one thin film layer formed on said top surface of said sacrificial layer such that said sacrificial layer is exposed;
• and
• Step E:
• removing said sacrificial layer.