Optically-transparent semiconductor buffer layers and structures employing the same

Abstract

Semiconductor structures including optically-transparent metamorphic buffer regions, devices employing such structures, and methods of fabrication. The optically-transparent metamorphic buffer is grown to provide a lattice constant transition between a smaller lattice constant and a larger lattice constant (or vice-versa), allowing materials with two different lattice constants to be monolithically integrated. Such buffer layer may include at least two elements from group V of the periodic table. The optically-transparent metamorphic buffer region may include digital-alloy superlattice structure (s) to confine material defects to the metamorphic buffer layer, and improve electrical properties of the metamorphic buffer layer, thereby improving the electronic properties of electronic devices such as optoelectronic devices and photovoltaic cells. Photonic devices such as solar cells and optical detectors containing such semiconductor structures.

Dependencies are inferred from the claim text.