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US 2021/0388528 A1Published application
Group iii nitride crystal, group iii nitride substrate, and method of manufacturing group iii nitride crystal
AssigneePanasonic Corporation
InventorsYusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Tomoaki SUMI, Junichi TAKINO, Yoshio OKAYAMA
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Abstract
A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm−3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
Claims16
A group III nitride crystal,
- wherein the group III nitride crystal is doped with an N-type dopant and a germanium element,
- the concentration of the N-type dopant is 1×1019 cm−3 or more, and
- the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
A method of manufacturing a group III nitride crystal, comprising:
- introducing a group III element-containing gas, a nitrogen element-containing gas, an N-type dopant-containing gas, and a germanium element-containing gas;
- generating and growing a group III nitride crystal on a seed substrate by reacting the introduced group III element-containing gas, the nitrogen atom-containing gas, the N-type dopant-containing gas, and the germanium element-containing gas.
Dependencies are inferred from the claim text.