Semiconductor memory device, method of driving the same and method of fabricating the same

A method of driving a semiconductor memory device comprising,

• memory strings, each of the memory strings including a plurality of memory cell transistors which are connected in series and having a floating portion;
• word lines coupled to a gate electrode of each of the plurality of memory cell transistors;
• bit lines connected to one end of each of the memory strings;
• source lines connected to other end of each of the memory strings;
• a row decoder electrically connected to the plurality of memory cell transistors through the word lines;
• and
• a column decoder electrically coupled to the plurality of memory cell transistors through the bit line,
• the method comprising,
• a programming step including a step for applying a first driving voltage to a selected bit line, and applying a second driving voltage less than the first driving voltage to non-selected bit lines or grounding the non-selected bit lines;
• and a step for applying a program voltage to the selected word line and applying a first pass voltage to the unselected word lines;
• and
• a reading step including a step for applying a third driving voltage to the selected bit line and applying a fourth driving voltage to the non-selected bit lines or grounding the non-selected bit lines;
• and a step for applying a reading voltage to the selected word line and applying a second pass voltage to the unselected word lines.