Integrated native oxide device based on aluminum, aluminum alloys or beryllium copper (inod) and discrete dynode electron multiplier (ddem)

A device, comprising:

• a substrate;
• a first dynode array comprising a portion of a block of metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper, the first dynode array attached to the substrate, and each dynode of the first dynode array having a respective first face;
• a second dynode array comprising a portion of a block of metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper, the second dynode array attached to the substrate and each dynode of the second dynode array having a respective second face, the second face opposed across a path from the first face of a corresponding one of the dynodes of the first dynode array;
• a native oxide thermally grown directly on the first face of the dynodes of the first dynode array and grown directly on the second face of the dynodes of the second dynode arrays.

A method of forming a device, the method comprising:

• providing a single unitary piece of a base metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper;
• machining the piece of the base metal to form at least one dynode array having a first end and a second end, the second end opposed from the first end across a length of the dynode array, the dynode array comprising a plurality of dynodes arrayed along the length of the dynode array, each of the dynodes physically coupled to a successive one of the dynodes in the array via a metallic interconnect that fixes a position of each of the dynodes with respect to the successive one of the dynodes in the array;
• and
• securing an insulator to the dynodes of the dynode array;
• removing the metallic interconnect after securing an insulator to the dynodes of the dynode array.