Semiconductor laser

Abstract

Disclosed in the present invention is a semiconductor laser, which includes one or more semiconductor chips (1-1), a total length of a gain region (1-11A) of a light-emitting unit (1-11) of each of the semiconductor chips (1-1) in a slow axis direction being 1 mm˜10 cm; a laser resonant cavity configured to adjust semiconductor laser emitted by the light-emitting unit (1-11) to resonate in the slow axis direction, so that the size of the gain region (1-11A) of the light-emitting unit (1-11) in the slow axis direction matches a fundamental mode spot radius ω0; and a fast-axis collimating element (FAC) disposed in the laser resonant cavity and configured to collimate the laser emitted by the light-emitting unit (1-11) in a fast axis direction. The semiconductor laser according to an embodiment of the present invention can improve the high-power output capability of the gain region on the one hand, and improve the beam quality on the other hand, which can achieve a high beam quality output of M2<2.

Dependencies are inferred from the claim text.