Epitaxial growth template using carbon buffer on sublimated sic substrate

Abstract

Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer by silicon sublimation, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform.

Dependencies are inferred from the claim text.