# US 2021/0344164 A1 · Manufacturable multi-emitter laser diode

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- Number: US 2021/0344164 A1
- Document ID: US20210344164A1
- Status: Published application
- Kind: A1
- Application number: 17/318,896
- Filed: 2021-05-12
- Published: 2021-11-04
- Earliest claimed: 2014-02-10
- Assignees: KYOCERA SLD Laser, Inc.
- Applicants: KYOCERA SLD Laser, Inc.
- Inventors: Dan Steigerwald; Melvin McLaurin; Eric Goutain; Alexander Sztein; Po Shan Hsu; Paul Rudy; James W. Raring
- Web page: https://patentgrep.com/patent/US20210344164A1

## CPC

- H01S 5/0087: {for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials}
- H01S 5/0202: {Cleaving}
- H01S 5/0203: {Etching}
- H01S 5/0215: {Bonding to the substrate}
- H01S 5/0216: {using an intermediate compound, e.g. a glue or solder}
- H01S 5/0218: {Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer}
- H01S 5/04253: {having specific optical properties, e.g. transparent electrodes}
- H01S 5/04256: {characterised by the configuration}
- H01S 5/22: having a ridge or stripe structure
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/4012: {Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms}
- H01S 5/4031: {Edge-emitting structures}
- H01S 5/4087: {emitting more than one wavelength}
- H01S 5/4093: {Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion}
- H01S 5/005: {Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping (H01S5/026, H01S5/18388 take precedence)}
- H01S 5/0217: {Removal of the substrate}
- H01S 5/04257: {having positive and negative electrodes on the same side of the substrate}
- H01S 5/4056: {emitting light in more than one direction}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

## Claims

### Claim at position 1

-20. (canceled)

### Claim 21

A system comprising:
a laser bar including a multi-emitter laser diode device;
a package configured to enclose the laser bar; and
an application configured with the laser bar, the laser bar comprising:
a carrier chip singulated from a carrier wafer, the carrier chip being characterized by a length and a width;
a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip with a bonding material at a bond region, the substrate having multiple epitaxial mesa dice regions positioned at an epitaxial wafer die pitch, the epitaxial wafer die pitch being designated as a first pitch; each of the epitaxial mesa dice regions arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining a distance between adjacent epitaxial mesa dice regions, each of the plurality of epitaxial mesa dice regions comprising epitaxial material; the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the at least one active layer;
a plurality of laser diode stripe regions formed in a ridge region in a top portion of the plurality of epitaxial mesa dice regions and away from the bonding material in the bond region;
each of the laser diode stripe regions configured with a pair of facets wherein a first facet is configured on a first end of the stripe region and a second facet is configured on the second end of the stripe region to form a cavity region; and
wherein a pair of the laser diode stripe regions is spaced by a third pitch from an adjacent pair of the laser diode stripe regions, wherein the pair of the laser diode stripe regions form a multiple-stripe laser die, where the second pitch is equal to or greater than the first pitch, and the third pitch is greater than the second pitch.

### Claim 22 (depends on 21)

The system of claim 21, wherein the pair of facets are configured from a cleaving process or an etching process.

### Claim 23 (depends on 21)

The system of claim 21, wherein the second pitch defining the distance between the adjacent epitaxial mesa dice regions configured with laser stripes is between 10 microns and 50 microns, or between 50 microns and 150 microns, or between 150 microns and 500 microns.

### Claim 24 (depends on 21)

The system of claim 21, wherein the laser bar further comprises one or more components overlying the carrier chip, the one or more components being selected from one or more of a metal contact region, a metal interconnect region, or a metal bonding pad.

### Claim 25 (depends on 21)

The system claim 21, wherein at least a pair of laser diode stripe regions formed on adjacent epitaxial mesa dice regions are electrically connected in series via a metal interconnect region or a metal contact region.

### Claim 26 (depends on 21)

The system of claim 21, wherein at least a pair of laser diode stripe regions formed on adjacent epitaxial mesa dice regions are electrically connected in parallel via a metal interconnect region or a metal contact region.

### Claim 27 (depends on 21)

The system of claim 21, wherein the bond region is comprised of a metal, an oxide, a glass, a soldering alloy, a polymer, or a wax.

### Claim 28 (depends on 21)

The system of claim 21, wherein the epitaxial material is gallium and nitrogen containing and grown on a polar, non-polar, or semi-polar plane.

### Claim 29 (depends on 21)

The system of claim 21, wherein the epitaxial material comprises at least one of GaN, AlN, InN, InGaN, AlGaN, InAlN, InAlGaN, AlAs, GaAs, GaP, InP, AlP, AlGaAs, AlInAs, InGaAs, AlGaP, AlInP, InGaP, AlInGaP, AlInGaAs, or AlInGaAsP.

### Claim 30 (depends on 21)

The system of claim 21, wherein the carrier wafer comprises at least one of silicon carbide, aluminum nitride, diamond, sapphire, gallium arsenide, indium phosphide, silicon, beryllium oxide, gold, silver, copper, or graphite, carbon nanotubes or graphene or composites thereof.

### Claim 31 (depends on 21)

The system of claim 21, wherein the is application is selected from a display application, a general lighting application, a projector application, a vehicle headlamp application, a defense application, a security application, a biomedicine application, a germicidal disinfection application, an industrial application, a metrology application, a materials processing application, an illumination application, a flat panel display application, a curing application, a printing application, a consumer electronics application, a photodynamic therapy application, a hair removal application, a dermatology application, a communications application, a health care application, a surgical application, or an information technology application.

### Claim 32 (depends on 21)

The system of claim 21, wherein the substrate is a gallium and nitrogen containing substrate such as a GaN substrate and the epitaxial material is gallium and nitrogen containing epitaxial material; wherein the laser bar emits in the 350 to 450 nm range or in the 450 to 550 nm range.

### Claim 33 (depends on 21)

The system of claim 21, wherein the substrate is a gallium and arsenic containing substrate such as a GaAs substrate and the epitaxial material is gallium and arsenic containing epitaxial material; wherein the laser bar emits in the 600 to 700 nm range, or in the 700 to 800 nm range, or in the 800 to 900 nm range, or in the 900 to 1000 nm range, or in the 1000 to 1100 nm range.

### Claim 34 (depends on 21)

The system of claim 21, wherein the substrate is an indium and phosphorous containing substrate such as an InP substrate and the epitaxial material is indium and phosphorous containing epitaxial layers; wherein the laser bar emits in the 1100 to 1300 nm range, or in the 1300 to 1400 nm range, or in the 1500 to 1600 nm range.

### Claim 35 (depends on 21)

The system of claim 21, wherein the laser bar is configured with an optical combiner to combine the optical output of the multi-emitters.

### Claim 36 (depends on 21)

The system of claim 21, wherein the laser bar is configured with collimating optics to collimate output beams from the laser diode stripe regions; wherein the collimating optics comprise a common fast axis collimating lens and/or a common slow axis collimating lens to collimate multiple emitted beams.

### Claim 37 (depends on 21)

The system of claim 21, wherein laser bar is configured with collimating optics to collimate output beams from the laser diode stripe regions; wherein the collimating optics comprise a lens array.

### Claim 38 (depends on 21)

The system of claim 21, where the substrate has a thermal conductivity greater than about 150 K/mW.

### Claim 39 (depends on 21)

The system of claim 21, wherein a bond pad is located on a side of the carrier chip opposite the bonded epitaxial material; wherein the laser bar comprises one or more gallium and nitrogen containing violet or blue emitting laser diodes operable at optical output powers above about 1 W; wherein the carrier chip resulting from the substrate has a thermal conductivity of greater than about 150 K/mW and is comprised of one or more of silicon carbide, aluminum nitride, beryllium oxide, gold, silver, copper, or graphite, carbon nanotubes or grapheme or composites thereof; and wherein the optical output is configured to excite a wavelength conversion material such as a phosphor material.