# US 2021/0343902 A1 · Optoelectronic semiconductor component having a sapphire support and method for the production thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0343902 A1 - Document ID: US20210343902A1 - Status: Published application - Kind: A1 - Application number: 17/280,209 - Filed: 2018-09-27 - Published: 2021-11-04 - Earliest claimed: 2018-09-27 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Lutz Hoeppl; Attila Molnar - Web page: https://patentgrep.com/patent/US20210343902A1 ## CPC - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/018: {Bonding of wafers} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/882: {Scattering means (H10H20/82 takes precedence)} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract An optoelectronic semiconductor component may include an optoelectronic semiconductor chip, a connecting material that contains amorphous aluminum oxide, and a sapphire support. The connecting material may be directly adjacent to the sapphire support. The optoelectronic semiconductor chip may be connected to the sapphire support by means of the connecting material containing aluminum oxide. ## Claims ### Claim 1 An optoelectronic semiconductor device comprising: an optoelectronic semiconductor chip; a connecting material comprising amorphous aluminum oxide; a sapphire support; and a first current spreading layer; wherein the connecting material is directly adjacent to the sapphire support and the optoelectronic semiconductor chip is connected to the sapphire support via the connecting material containing amorphous aluminum oxide; the optoelectronic semiconductor chip comprising: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type; which form a semiconductor layer stack; wherein the first semiconductor layer is arranged between the second semiconductor layer and the sapphire support; and wherein the first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer (100) and is electrically connected to the first semiconductor layer. ### Claim 2 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein a first main surface of the first semiconductor layer facing away from the second semiconductor layer is roughened and a first main surface of the connecting material facing away from the first semiconductor layer forms a planar surface. ### Claim 3 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the connecting material is directly adjacent to the first semiconductor layer. ### Claim 4 (depends on 1) The optoelectronic semiconductor device according to claim 1, in which wherein the first current spreading layer is directly adjacent to the first semiconductor layer. ### Claim 5 (depends on 1) The optoelectronic semiconductor device according to claim 1, in which wherein a first main surface of the first semiconductor layer is roughened and a first main surface of the first current spreading layer facing away from the first semiconductor layer is roughened. ### Claim 6 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first current spreading layer consists of a transparent conductive material. ### Claim 7 (depends on 1) The optoelectronic semiconductor device according to claim 1, further comprising a dielectric intermediate layer on a side of the first current spreading layer facing away from the first semiconductor layer. ### Claim 8 (depends on 7) The optoelectronic semiconductor device according to claim 7, wherein a first main surface of the dielectric intermediate layer facing away from the first current spreading layer is roughened. ### Claim 9 (depends on 7) The optoelectronic semiconductor device according to claim 7, wherein the connecting material is arranged between the dielectric intermediate layer and the sapphire support. ### Claim 10 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first current spreading layer is formed over the entire surface area. ### Claim 11 (depends on 1) The optoelectronic semiconductor device according to claim 1, wherein the first current spreading layer is formed in a ring shape. ### Claim 12 A method for producing an optoelectronic semiconductor device comprising: forming an optoelectronic semiconductor chip; forming a first current spreading layer; forming a connecting material comprising amorphous aluminum oxide over the optoelectronic semiconductor chip; and bringing a sapphire support in contact with the connecting material and connecting the optoelectronic semiconductor chip to the sapphire support via the connecting material; wherein forming the optoelectronic semiconductor chip comprises forming a first semiconductor layer of a first conductivity type over a growth substrate and forming a second semiconductor layer of a second conductivity type over the first semiconductor layer; and wherein the first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer and is electrically connected to the first semiconductor layer. ### Claim 13 (depends on 12) The method of claim 12, further comprising: applying an intermediate support over the second semiconductor layer; and removing the growth substrate, the connecting material containing amorphous aluminum oxide, and the sapphire support being applied to one side of the first semiconductor layer. ### Claim 14 (depends on 13) The method of claim 13, further comprising roughening a first main surface of the first semiconductor layer before applying the connecting material containing amorphous aluminum oxide. ### Claim 15 (depends on 13) The method according to claim 13, wherein the first current spreading layer is formed over the first semiconductor layer after the growth substrate has been removed.