# US 2021/0343753 A1 · Display panel and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0343753 A1 - Document ID: US20210343753A1 - Status: Published application - Kind: A1 - Application number: 16/337,933 - Filed: 2018-01-09 - Published: 2021-11-04 - Earliest claimed: 2018-01-05 - Assignees: Hkc Corporation Limited; Chongqing Hkc Optoelectronics Technology Co., Ltd. - Applicants: HKC Corporation Limited; Chongqing HKC Optoelectronics Technology Co., ltd. - Inventors: EN-Tsung CHO - Web page: https://patentgrep.com/patent/US20210343753A1 ## CPC - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/031: {of thin-film transistors [TFT]} - H10D 30/6741: {Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/122: Pixel-defining structures or layers, e.g. banks - G02F 1/13685: {Top gates} - G02F 2202/10: semiconductor - H10K 59/12: Active-matrix OLED [AMOLED] displays - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present application discloses a display panel and a display device. The display panel includes: a substrate having a plurality of pixel regions; at least one active switch formed on the substrate; a transparent conductive layer electrically connected to the active switch; an Organic Light-Emitting Diode (OLED) formed on the transparent conductive layer; and a common electrode layer covering the OLED. The active switch includes a semiconductor layer. The semiconductor layer is made of a germanium-containing semiconductor material and has an electron mobility greater than 3 cm2/vs. ## Claims ### Claim 1 A display panel, comprising: a substrate having a plurality of pixel regions; at least one active switch formed on the substrate; a transparent conductive layer electrically connected to the active switch; an Organic Light-Emitting Diode (OLED) formed on the transparent conductive layer; and a common electrode layer covering the OLED; the active switch comprises a semiconductor layer; the semiconductor layer is made of a germanium-containing semiconductor material and is prepared by chemical vapor deposition, and the gas ratios of the preparation process thereof are: GeH4/SiH4=0.1-10, SiH4/N2O=0.1-10, and GeH4/N2O=0.1-10; the semiconductor layer comprises a silicon germanium oxide; the semiconductor layer comprises a first doping layer, an active layer, and a second doping layer; the active layer is provided between the first doping layer and the second doping layer, and the active layer comprises the silicon germanium oxide; the first doping layer, the active layer, and the second doping layer are located in the same layer; the active switch further comprises: a gate insulating layer formed on the semiconductor layer; a gate metal layer formed on the gate insulating layer: a dielectric layer formed on the gate metal layer; a source metal layer and a drain metal layer formed on the dielectric layer; the gate insulating layer and the gate metal layer are equal in width, the gate metal layer is located between the gate metal layer and the drain metal layer, the source metal layer penetrates through the dielectric layer and is electrically connected to the first doping layer, and the drain metal layer penetrates through the dielectric layer and is electrically connected to the second doping layer; a first insulating layer formed on the source metal layer, the drain metal layer and the dielectric layer; a second insulating layer formed on the first insulating layer; the transparent conductive layer is formed on the first insulating layer, is embedded between the first insulating layer and the second insulating layer, and is electrically connected to the drain metal layer; and a third insulating layer formed on the second insulating layer; the common electrode layer is formed on the third insulating layer; the OLED and the third insulating layer are located on the same layer, and are electrically connected to the transparent conductive layer and the common electrode layer, respectively; the common electrode layer entirely covering the third insulating layer; the active switch is a low-temperature poly-silicon thin film transistor. ### Claim 2 A display panel, comprising: a substrate having a plurality of pixel regions; at least one active switch formed on the substrate; a transparent conductive layer electrically connected to the active switch; an OLED formed on the transparent conductive layer; and a common electrode layer covering the OLED; the active switch comprises a semiconductor layer; the semiconductor layer is made of a germanium-containing semiconductor material and is prepared by chemical vapor deposition, and the gas ratios of the preparation process thereof are: GeH4/SiH4=0.1-10, SiH4/N2O=0.1-10, and GeH4/N2O=0.1-10. ### Claim 3 (depends on 2) The display panel according to claim 2, wherein the semiconductor layer comprises a silicon germanium oxide. ### Claim 4 (depends on 3) The display panel according to claim 3, wherein the semiconductor layer comprises a first doping layer, an active layer, and a second doping layer; the active layer is provided between the first doping layer and the second doping layer; and the active layer comprises the silicon germanium oxide. ### Claim 5 (depends on 4) The display panel according to claim 4, wherein the first doping layer, the active layer, and the second doping layer are located on the same layer; the active switch further comprises: a gate insulating layer formed on the semiconductor layer; a gate metal layer formed on the gate insulating layer; a dielectric layer formed on the gate metal layer; and a source metal layer and a drain metal layer formed on the dielectric layer; the source metal layer penetrates through the dielectric layer and the gate insulating layer and is electrically connected to the first doping layer, and the drain metal layer penetrates through the dielectric layer and the gate insulating layer and is electrically connected to the second doping layer. ### Claim 6 (depends on 5) The display panel according to claim 5, further comprising: a first insulating layer formed on the source metal layer, the drain metal layer and the dielectric layer; a second insulating layer formed on the first insulating layer; the transparent conductive layer is formed on the first insulating layer, is embedded between the first insulating layer and the second insulating layer, and is electrically connected to the drain metal layer; and a third insulating layer formed on the second insulating layer; the common electrode layer is formed on the third insulating layer; the OLED and the third insulating layer are located on the same layer, and are electrically connected to the transparent conductive layer and the common electrode layer, respectively. ### Claim 7 (depends on 6) The display panel according to claim 6, wherein the common electrode layer entirely covers the third insulating layer. ### Claim 8 (depends on 5) The display panel according to claim 5, wherein the active layer is provided under the gate metal layer, and the width of the active layer is less than or equal to that of the gate metal layer. ### Claim 9 (depends on 4) The display panel according to claim 4, wherein the first doping layer, the active layer, and the second doping layer are located on the same layer; the active switch further comprises: a gate insulating layer formed on the semiconductor layer: a gate metal layer formed on the gate insulating layer: a dielectric layer formed on the gate metal layer; and a source metal layer and a drain metal layer formed on the dielectric layer; the gate insulating layer and the gate metal layer are equal in width, the gate metal layer is located between the source metal layer and the drain metal layer, the source metal layer penetrates through the dielectric layer and is electrically connected to the first doping layer, and the drain metal layer penetrates through the dielectric layer and is electrically connected to the second doping layer. ### Claim 10 (depends on 9) The display panel according to claim 9, further comprising: a first insulating layer formed on the source metal layer, the drain metal layer and the dielectric layer; a second insulating layer formed on the first insulating layer; the transparent conductive layer is formed on the first insulating layer, is embedded between the first insulating layer and the second insulating layer, and is electrically connected to the drain metal layer; and a third insulating layer formed on the second insulating layer; the common electrode layer is formed on the third insulating layer; the OLED and the third insulating layer are located on the same layer, and are electrically connected to the transparent conductive layer and the common electrode layer, respectively. ### Claim 11 (depends on 10) The display panel according to claim 10, wherein the common electrode layer entirely covers the third insulating layer. ### Claim 12 (depends on 9) The display panel according to claim 9, wherein the active layer is provided under the gate metal layer, and the width of the active layer is less than or equal to that of the gate metal layer. ### Claim 13 A display device, comprising: a control member, and a display panel; the display panel comprises: a substrate having a plurality of pixel regions; at least one active switch formed on the substrate; a transparent conductive layer electrically connected to the active switch; an OLED formed on the transparent conductive layer; and a common electrode layer covering the OLED; the active switch comprises a semiconductor layer; the semiconductor layer is made of a germanium-containing semiconductor material and is prepared by chemical vapor deposition, and the gas ratios of the preparation process thereof are: GeH4/SiH4=0.1-10, SiH4/N2O=0.1-10, and GeH4/N2O=0.1-10. ### Claim 14 (depends on 13) The display device according to claim 13, wherein the semiconductor layer comprises a silicon germanium oxide. ### Claim 15 (depends on 14) The display device according to claim 14, wherein the semiconductor layer comprises a first doping layer, an active layer, and a second doping layer; the active layer is provided between the first doping layer and the second doping layer; and the active layer comprises the silicon germanium oxide. ### Claim 16 (depends on 15) The display device according to claim 15, wherein the first doping layer, the active layer, and the second doping layer are located on the same layer; the active switch further comprises: a gate insulating layer formed on the semiconductor layer; a gate metal layer formed on the gate insulating layer; a dielectric layer formed on the gate metal layer; and a source metal layer and a drain metal layer formed on the dielectric layer; the source metal layer penetrates through the dielectric layer and the gate insulating layer and is electrically connected to the first doping layer, and the drain metal layer penetrates through the dielectric layer and the gate insulating layer and is electrically connected to the second doping layer. ### Claim 17 (depends on 15) The display device according to claim 15, wherein the first doping layer, the active layer, and the second doping layer are located on the same layer; the active switch further comprises: a gate insulating layer formed on the semiconductor layer; a gate metal layer formed on the gate insulating layer: a dielectric layer formed on the gate metal layer; and a source metal layer and a drain metal layer formed on the dielectric layer; the gate insulating layer and the gate metal layer are equal in width, the gate metal layer is located between the source metal layer and the drain metal layer, the source metal layer penetrates through the dielectric layer and is electrically connected to the first doping layer, and the drain metal layer penetrates through the dielectric layer and is electrically connected to the second doping layer. ### Claim 18 (depends on 17) The display device according to claim 17, wherein the display panel further comprises: a first insulating layer formed on the source metal layer, the drain metal layer and the dielectric layer; a second insulating layer formed on the first insulating layer; the transparent conductive layer is formed on the first insulating layer, is embedded between the first insulating layer and the second insulating layer, and is electrically connected to the drain metal layer; and a third insulating layer formed on the second insulating layer; the common electrode layer is formed on the third insulating layer; the OLED and the third insulating layer are located on the same layer and are electrically connected to the transparent conductive layer and the common electrode layer, respectively. ### Claim 19 (depends on 18) The display device according to claim 18, wherein the common electrode layer entirely covers the third insulating layer. ### Claim 20 (depends on 17) The display device according to claim 17, wherein the active layer is provided under the gate metal layer, and the width of the active layer is less than or equal to that of the gate metal layer.